| PART |
Description |
Maker |
| CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| SKM150GAL121D |
150 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON INTERNATIONAL
|
| CM150DY-24NF |
Dual IGBTMOD?/a> NF-Series Module 150 Amperes/1200 Volts
Dual IGBTMOD⑩ NF-Series Module 150 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| CM150DU-24F |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM75DY-24H |
Dual IGBTMOD 75 Amperes/1200 Volts 75 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
Powerex Power Semiconductors
Powerex, Inc.
|
| M0334RC120 |
150 A, 1200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| CM150DU-24H |
Dual IGBTMOD 150 Amperes/1200 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| SD200R12M 150LR120A 152LR120A SD150N06M |
200 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC
150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AC
150 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AC
|
VISHAY SEMICONDUCTORS
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
